STRUCTURE OF a-Si:H/a-Si C :H MULTILAYERS DEPOSITED IN A REACTOR WITH AUTOMATED SUBSTRATE HOLDER

1-x x This paper deals with the structural properties of a-Si:H/a-Si C :H multilayers 4 4 4 deposited by glow-discharge decomposition of SiH and SiH and CH mixtures. The main feature of the rf plasma reactor is an automated substrate holder. The plasma stabilization time 1-x x and its influence on the multilayer obtained is discussed. A series of a-Si:H/a-Si C :H multilayers has been deposited and characterized by secondary ion mass spectrometry (SIMS), X-ray diffraction (XRD) and transmission electron microscopy (TEM). No asymmetry between the two types of interface has been observed. The results show that the multilayers presents a very good periodicity and low roughness. The difficulty of determining the abruptness of the multilayer at nm scale is discussed.